Fairchild Semiconductor nds335n free download

File name nds335n.pdf

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field 1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. Industry standard outline SOT-23 surface mount package These devices are particularly suited for low voltage using poprietary SuperSOTTM-3 design for superior thermal applications in notebook computers, portable phones, PCMCIA and electrical capabilities. cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline High density cell design for extremely low RDS(ON). surface mount package. Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25